[J-8] Si and SiC Power Devices

[J-8-03] Experimental Demonstration of the Surge Current Capability of Embedded SBDs in 1.2-kV SiC SBD-integrated Trench MOSFETs with Ti and Ni as Schottky Metals

〇Yudai Kitamura¹, Takeshi Tawara², Shinsuke Harada², Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-8-03

This study investigates, for the first time, the surge current capabilities of embedded Schottky Barrier Diodes (SBDs) in a 1.2-kV SiC SBD-integrated trench MOSFET (SWITCH-MOS) with Ti and Ni, as Schottky metals, and demonstrates sufficiently high SBD surge current capabilities when a higher Schottky barrier height of Ni was used.