[J-9] GaN Power Devices

[J-9-02] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1. Univ. of Fukui (Japan), 2. SCIOCS (Japan), 3. Hosei Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-9-02

We report the experimental results on mapping characterization of the edge structure of Ni/n-GaN Schottky contacts formed with a metal-shadow-mask by scanning internal photoemission microscopy (SIPM). The high breakdown-voltage and uniform SIPM signals under ap-plied voltage were obtained for the fresh sample. On the other hand, SIPM signals increased significantly at the electrode edge for the aged sample compared with the electrode center. It is considered that the influence of the electric field concentration on the electrode periphery was detected as a photocurrent. We found that SIPM is available to clarify the relationship between the difference in the structure and electric field concentration at the edge of electrode.