Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

Dongkyu Jang

doi:https://doi.org/10.7567/SSDM.2023.E-3-01

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[E-3] DRAM

Thu. Sep 7, 2023 9:00 AM - 10:00 AM Room E (223, Bldg. 2)

Session Chairs: E Ray Hsieh (National Central Univ.), Atsushi Himeno (Panasonic Holdings Corporation)

9:00 AM - 9:15 AM

[E-3-01] Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

^○Dongkyu Jang¹, Jieun Lee¹, Daekyum Kim¹, Kyoungrock Nho¹, Inkyum Lee¹, Shindeuk Kim¹, Taehoon Park¹ (1. Samsung Electronics Corp. (Korea))

https://doi.org/10.7567/SSDM.2023.E-3-01

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Presentation information

[E-3] DRAM

[E-3-01] Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

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