Novel Stacked Gate All-Around Nanosheet Transistor-Based DRAM

Imtiyaz Ahmad khan

doi:https://doi.org/10.7567/SSDM.2023.E-3-02

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Oral Presentation

02: Advanced and Emerging Memories / New Applications

[E-3] DRAM

Thu. Sep 7, 2023 9:00 AM - 10:00 AM Room E (223, Bldg. 2)

Session Chairs: E Ray Hsieh (National Central Univ.), Atsushi Himeno (Panasonic Holdings Corporation)

9:15 AM - 9:30 AM

[E-3-02] Novel Stacked Gate All-Around Nanosheet Transistor-Based DRAM

^○Imtiyaz Ahmad khan¹, Sanjeev Kumar Manhas¹, Arvind Kumar², Mahendra Pakala² (1. Indian Inst. of Tech. Roorkee (India), 2. Applied Materials Inc. (United States of America))

https://doi.org/10.7567/SSDM.2023.E-3-02

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Presentation information

[E-3] DRAM

[E-3-02] Novel Stacked Gate All-Around Nanosheet Transistor-Based DRAM

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