Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

Dongkyu Jang

doi:https://doi.org/10.7567/SSDM.2023.E-3-01

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[E-3] DRAM

2023年9月7日(木) 09:00 〜 10:00 Room E (223, Bldg. 2)

Session Chairs: E Ray Hsieh (National Central Univ.), Atsushi Himeno (Panasonic Holdings Corporation)

09:00 〜 09:15

[E-3-01] Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

^○Dongkyu Jang¹, Jieun Lee¹, Daekyum Kim¹, Kyoungrock Nho¹, Inkyum Lee¹, Shindeuk Kim¹, Taehoon Park¹ (1. Samsung Electronics Corp. (Korea))

https://doi.org/10.7567/SSDM.2023.E-3-01

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講演情報

[E-3] DRAM

[E-3-01] Improvement of Cell Transistors in High-k/ Metal-Gate Peripheral Transistors DRAM Technology for High Performance Graphic Memories

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