Novel Stacked Gate All-Around Nanosheet Transistor-Based DRAM

Imtiyaz Ahmad khan

doi:https://doi.org/10.7567/SSDM.2023.E-3-02

講演情報

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[E-3] DRAM

2023年9月7日(木) 09:00 〜 10:00 Room E (223, Bldg. 2)

Session Chairs: E Ray Hsieh (National Central Univ.), Atsushi Himeno (Panasonic Holdings Corporation)

09:15 〜 09:30

[E-3-02] Novel Stacked Gate All-Around Nanosheet Transistor-Based DRAM

^○Imtiyaz Ahmad khan¹, Sanjeev Kumar Manhas¹, Arvind Kumar², Mahendra Pakala² (1. Indian Inst. of Tech. Roorkee (India), 2. Applied Materials Inc. (United States of America))

https://doi.org/10.7567/SSDM.2023.E-3-02

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講演情報

[E-3] DRAM

[E-3-02] Novel Stacked Gate All-Around Nanosheet Transistor-Based DRAM

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