Compact Thermally Stable High Voltage FinFET with 40nm Tox and Lateral Break-Down>35V for 3D NAND Flash Periphery Application

Alessio Spessot

doi:https://doi.org/10.7567/SSDM.2023.E-4-02

11:15 〜 11:30

[E-4-02] Compact Thermally Stable High Voltage FinFET with 40nm Tox and Lateral Break-Down>35V for 3D NAND Flash Periphery Application

^○Alessio Spessot¹, Philippe Matagne¹, Hiroaki Arimura¹, Jishnu Ganguly¹, Romain Ritzenthaler¹, Joao Bastos¹, Ritam Sarkar¹, Elena Capogreco¹, Yangyin Chen^1,2, Naoto Horiguchi¹ (1. imec (Belgium), 2. Western Digital (Belgium))

https://doi.org/10.7567/SSDM.2023.E-4-02

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講演情報

[E-4] 3D NAND

[E-4-02] Compact Thermally Stable High Voltage FinFET with 40nm Tox and Lateral Break-Down>35V for 3D NAND Flash Periphery Application

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