Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit

Hiromi Sawai

doi:https://doi.org/10.7567/SSDM.2023.E-5-02

9:15 AM - 9:30 AM

[E-5-02] Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit

^○Hiromi Sawai¹, Motomu Kurata¹, Tsutomu Murakawa¹, Yoshinori Ando¹, Takako Kikuchi¹, Kunihiro Fukushima¹, Ryota Eto¹, Shinya Sasagawa¹, Kentaro Sugaya¹, Ryota Hodo¹, Yuki Okamoto¹, Toshiki Mizuguchi¹, Hitoshi Kunitake¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.E-5-02

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Presentation information

[E-5] Oxide semiconductor TFTs and technology

[E-5-02] Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit

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