Rapid Thermal Crystallization of H-doped InO <i> <sub>x</sub></i> for Thin Film Transistors

Xiaoqian Wang

doi:https://doi.org/10.7567/SSDM.2023.E-5-03

講演情報

Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[E-5] Oxide semiconductor TFTs and technology

2023年9月8日(金) 09:00 〜 10:15 Room E (223, Bldg. 2)

Session Chairs: Juan Paolo Bermundo (NAIST), Jun Koyama (Semiconductor Energy Lab.)

09:30 〜 09:45

[E-5-03] Rapid Thermal Crystallization of H-doped InO _x for Thin Film Transistors

^○Xiaoqian Wang¹, Mamoru Furuta¹ (1. Kochi Univ. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.E-5-03

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講演情報

[E-5] Oxide semiconductor TFTs and technology

[E-5-03] Rapid Thermal Crystallization of H-doped InO x for Thin Film Transistors

パスワード

[E-5-03] Rapid Thermal Crystallization of H-doped InO _x for Thin Film Transistors