Monolithic heterogeneous Integration Inverter Consisting of Si (100) PMOSFET and Normally-off Al <sub>2</sub>O <sub>3</sub>/GaN NMOSFET

Yutong Fan

doi:https://doi.org/10.7567/SSDM.2023.F-7-04

14:30 〜 14:45

[F-7-04] Monolithic heterogeneous Integration Inverter Consisting of Si (100) PMOSFET and Normally-off Al ₂O ₃/GaN NMOSFET

^○Yutong Fan^1,2, Weihang Zhang^1,2, Xi Liu¹, Yu Wen¹, Zhihong Liu^1,2, Shenglei Zhao¹, Jincheng Zhang^1,2, Yue Hao^1,2 (1. Lab. of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Univ. of Xidian (China), 2. Guangzhou wide bandgap semiconductor innovation center, inst. of Guangzhou technology, Univ. of Xidian (China))

https://doi.org/10.7567/SSDM.2023.F-7-04

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講演情報

[F-7] Advanced CMOS: Device Technology 1

[F-7-04] Monolithic heterogeneous Integration Inverter Consisting of Si (100) PMOSFET and Normally-off Al ₂O ₃/GaN NMOSFET

パスワード

講演情報

[F-7] Advanced CMOS: Device Technology 1

[F-7-04] Monolithic heterogeneous Integration Inverter Consisting of Si (100) PMOSFET and Normally-off Al 2O 3/GaN NMOSFET

パスワード

[F-7-04] Monolithic heterogeneous Integration Inverter Consisting of Si (100) PMOSFET and Normally-off Al ₂O ₃/GaN NMOSFET