Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO <sub>2</sub>-FeFET by Charge Component Analysis

Yoko Yoshimura

doi:https://doi.org/10.7567/SSDM.2023.H-5-01

Presentation information

Oral Presentation

02: Advanced and Emerging Memories / New Applications

[H-5] Ferroelectric Memory Materials

Fri. Sep 8, 2023 9:00 AM - 10:15 AM Room H (232, Bldg. 2)

Session Chairs: Grenouillet Laurent (CEA-Leti), Halid Mulaosmanovic (GlobalFoundries., Germany)

9:00 AM - 9:15 AM

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis

^○Yoko Yoshimura¹, Kunifumi Suzuki¹, Reika Ichihara¹, Kiwamu Sakuma¹, Kota Takahashi¹, Kazuhiro Matsuo¹, Makoto Fujiwara¹, Masumi Saitoh¹ (1. Kioxia Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.H-5-01

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Presentation information

[H-5] Ferroelectric Memory Materials

[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO 2-FeFET by Charge Component Analysis

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[H-5-01] Understanding of Polarization Reversal and Charge Trapping under Imprint in HfO ₂-FeFET by Charge Component Analysis