Ferroelectric Properties Tuning in Hf 0.5Zr 0.5O 2 Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

Yuyan Fan

doi:https://doi.org/10.7567/SSDM.2023.H-5-02

9:15 AM - 9:30 AM

[H-5-02] Ferroelectric Properties Tuning in Hf _0.5Zr _0.5O ₂ Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

^○Yuyan Fan^1,2, Shunda Zhang³, Yulong Dong^1,2, Danyang Chen^1,2, Jiahui Zhang^3,4, Jingquan Liu¹, Mengwei Si¹, Yanwei Cao³, Xiuyan Li¹ (1. National Key Lab. of Sci. and Tech. on Micro/Nano Fabrication (China), 2. Department of Micro/Nano Electronics, Shanghai Jiao Tong Univ. (China), 3. Ningbo Inst. of Materials Tech. and Eng., Chinese Academy of Sci. (China), 4. Faculty of Electrical Eng. and Computer Sci., Ningbo Univ. (China))

https://doi.org/10.7567/SSDM.2023.H-5-02

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Presentation information

[H-5] Ferroelectric Memory Materials

[H-5-02] Ferroelectric Properties Tuning in Hf _0.5Zr _0.5O ₂ Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

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Presentation information

[H-5] Ferroelectric Memory Materials

[H-5-02] Ferroelectric Properties Tuning in Hf 0.5Zr 0.5O 2 Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates

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[H-5-02] Ferroelectric Properties Tuning in Hf _0.5Zr _0.5O ₂ Thin Films via Controlling the Crystal Orientations of Single-crystalline TiN Substrates