Performance Improvement of HfZrO x Ferroelectric Tunnel Junction with Amorphous Al 2O 3 Passivation Layer

Yueyuan - Zhang

doi:https://doi.org/10.7567/SSDM.2023.H-5-05

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Oral Presentation

02: Advanced and Emerging Memories / New Applications

[H-5] Ferroelectric Memory Materials

Fri. Sep 8, 2023 9:00 AM - 10:15 AM Room H (232, Bldg. 2)

Session Chairs: Grenouillet Laurent (CEA-Leti), Halid Mulaosmanovic (GlobalFoundries., Germany)

10:00 AM - 10:15 AM

[H-5-05] Performance Improvement of HfZrO _x Ferroelectric Tunnel Junction with Amorphous Al ₂O ₃ Passivation Layer

^○Yueyuan - Zhang¹, Yue - Peng¹, Fenning - Liu¹, Yan - Liu¹, Yue - Hao¹, Genquan - Han¹ (1. Xidian Univ. (China))

https://doi.org/10.7567/SSDM.2023.H-5-05

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Presentation information

[H-5] Ferroelectric Memory Materials

[H-5-05] Performance Improvement of HfZrO x Ferroelectric Tunnel Junction with Amorphous Al 2O 3 Passivation Layer

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[H-5-05] Performance Improvement of HfZrO _x Ferroelectric Tunnel Junction with Amorphous Al ₂O ₃ Passivation Layer