Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Epitaxy

Yuji Yamamoto

doi:https://doi.org/10.7567/SSDM.2023.M-4-01

10:45 AM - 11:00 AM

[M-4-01] Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Epitaxy

^○Yuji Yamamoto¹, Wei-Chen Wen¹, Markus Andreas Schubert¹, Agnieszka Anna Anna Corley-Wiciak¹, Sho Sugawa², Yuta Ito², Ryo Yokogawa², Atsushi Ogura², Bernd Tillack^1,3 (1. IHP - Leibniz-Institut für innovative Mikroelektronik (Germany), 2. School of Sci. and Tech., Meiji Univ. (Japan), 3. Technische Universität Berlin (Germany))

https://doi.org/10.7567/SSDM.2023.M-4-01

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Presentation information

[M-4] Group IV Materials II

[M-4-01] Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Epitaxy

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