Seed-layer driven solid phase epitaxy of amorphous Ge 1− xSn x layers on Si(001) substrates toward in-plane strain control

Tatsuma Hiraide

doi:https://doi.org/10.7567/SSDM.2023.M-4-03

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-4] Group IV Materials II

2023年9月7日(木) 10:45 〜 12:00 Room M (431, Bldg. 4)

Session Chairs: Akira Heya (Univ. of Hyogo), Taizoh Sadoh (Kyushu Univ.)

11:15 〜 11:30

[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge ₁₋ _xSn _x layers on Si(001) substrates toward in-plane strain control

^○Tatsuma Hiraide¹, Masashi Kurosawa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹ (1. Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.M-4-03

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講演情報

[M-4] Group IV Materials II

[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge 1− xSn x layers on Si(001) substrates toward in-plane strain control

パスワード

[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge ₁₋ _xSn _x layers on Si(001) substrates toward in-plane strain control