2023 International Conference on Solid State Devices and Materials

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-5] SiC MOS interfaces

2023年9月8日(金) 09:00 〜 10:15 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Tarou Nishiguchi (Sumitomo Electric Industries, Ltd.)

09:15 〜 09:30

[N-5-02] Role of P(O 2) in Annealing of the SiO 2/SiC Stack Formed by Si Deposition plus Oxidation

○Qian Zhang1,2, Nannan You1, Jiayi Wang1, Yang Xu1, Yu Wang1,2, Kuo Zhang1,2, Shengkai Wang1,2 (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China))

https://doi.org/10.7567/SSDM.2023.N-5-02

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