Theoretical Analysis of Electron Scattering by Step-Terrace Structures at SiC Metal-Oxide-Semiconductor Interface

Keisuke Utsumi

doi:https://doi.org/10.7567/SSDM.2023.N-5-04

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-5] SiC MOS interfaces

2023年9月8日(金) 09:00 〜 10:15 Room N (432, Bldg. 4)

Session Chairs: Heiji Watanabe (Osaka Univ.), Tarou Nishiguchi (Sumitomo Electric Industries, Ltd.)

09:45 〜 10:00

[N-5-04] Theoretical Analysis of Electron Scattering by Step-Terrace Structures at SiC Metal-Oxide-Semiconductor Interface

^○Keisuke Utsumi¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-5-04

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講演情報

[N-5] SiC MOS interfaces

[N-5-04] Theoretical Analysis of Electron Scattering by Step-Terrace Structures at SiC Metal-Oxide-Semiconductor Interface

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