Epitaxial Temperature Effect on the Band Alignment of MoS<sub>2</sub>/GaN Heterojunction Measured by X-ray Photoelectron Spectroscopy

Ray-Yu Hong

doi:https://doi.org/10.7567/SSDM.2023.PS-11-08

[PS-11-08] Epitaxial Temperature Effect on the Band Alignment of MoS₂/GaN Heterojunction Measured by X-ray Photoelectron Spectroscopy

^○Ray-Yu Hong¹, Ing-Song Yu¹, Ping-Yu Tsai², Po-Hung Wu³ (1. National Dong Hwa Univ. (Taiwan), 2. National Chung-Shan Inst. of Sci. & Tech. (Taiwan), 3. Stone & Resource Industry R&D Center (Taiwan))

https://doi.org/10.7567/SSDM.2023.PS-11-08

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Presentation information

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-08] Epitaxial Temperature Effect on the Band Alignment of MoS₂/GaN Heterojunction Measured by X-ray Photoelectron Spectroscopy

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Presentation information

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-08] Epitaxial Temperature Effect on the Band Alignment of MoS2/GaN Heterojunction Measured by X-ray Photoelectron Spectroscopy

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[PS-11-08] Epitaxial Temperature Effect on the Band Alignment of MoS₂/GaN Heterojunction Measured by X-ray Photoelectron Spectroscopy