Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm<sup>2</sup>) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li

doi:https://doi.org/10.7567/SSDM.2023.PS-4-08

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li¹, Bo Li¹, Zhengweng Ma¹, Huakai Yang¹, Shijie He¹, Jiajun Han², Yu Li¹, Xiaohua Li¹, Wei He¹, ^○Xinke - Liu¹ (1. Shenzhen Univ. (China), 2. South China Normal Univ. (China))

https://doi.org/10.7567/SSDM.2023.PS-4-08

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講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

パスワード

講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm2) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

パスワード

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact