[AMDp1-4] Stable and High-mobility Oxide TFTs using Low-temperature Processed ZTO/IZO Stacked Channels

*Tsubasa Moritsuka¹, Hiroyuki Uchiyama¹ (1. Hitachi, Ltd. (Japan))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10 |PDF ダウンロード

[AMDp1-5] Transfer Characteristics of H₂O₂-Doped ZrInZnO Thin Film Transistors

*Sangmin Lee¹, Bohyeon Jeon¹, Byoungdeog Choi¹ (1. Sungkyunkwan University (Korea))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10 |PDF ダウンロード

[AMDp1-6] Study on the Influence Factors of ESD Defect for a-IGZO TFT

*Ding Yuan Li¹, Ru Wang Guo¹, Tian Zhen Liu¹, Xian Xue Duan¹, Sang Jin Kim¹, Sang Soo Park¹, Ming Ming Chu¹, Xin Hong Chen¹, Li Li Wei¹, Hai Feng Chen¹, Wei Fang¹ (1. BOE HF (China))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10

[AMDp1-7] Study on Promoting Transmittance on Dielectric Multi-layers for IGZO LCD Displays

*Ningbo Yi^1,2, Lixia Li², Sibang Long², Sen Yan², Feng Zhao² (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10

[AMDp1-8] Characteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield LayerCharacteristics of Top-gate Self-aligned Oxide A-IGZO TFT With Copper Light Shield Layer

*Qian Ma^1,2, Xingyu Zhou², YuanJun Hsu², Yuanchun Wu² (1. Peking University Shenzhen Graduate School (China), 2. Shenzhen China Star Optoelectronics Technology Co., LTD (China))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10

[AMDp1-9] Fluorine-doped Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated via Solution Process

*Donghee Choi¹, Byoungdeog Choi¹ (1. University of Sungkyunkwan (Korea))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10 |PDF ダウンロード

[AMDp1-10] Analysis and Solution of 4/5/6 levels related issues in a-IGZO TFT Gate Driving Circuits for 32-in FHD TFT-LCD

*suping xi¹, tianhong Wang¹, longqiang Shi¹, yifang chou¹, shiming Ge¹, chuhong Dai¹, jiajia Yu¹, Liang Hu¹, Jiang Zhu¹, wei Shao¹ (1. China Star Optoelectronics Technology (China))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10

[AMDp1-11] Investigation of Hump Phenomenon in a-IGZO Thin-Film Transistors under Positive Bias Stress

*Xinlv Duan¹ (1. Institute of Microelectronics of the Chinses Academy of Sciences (China))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10 |PDF ダウンロード

[AMDp1-13] High-Mobility and High-Reliability Top-Gate Self-Aligned IGZO TFTs with incorporate high density passivation layer (HDP) after PV deposition

*Peng Zhang^1,2, Guo Zhen Lin^1,2, Ning Shu Zhao^1,2, Tao Le Zhang^1,2,3, Jun Yuan Hsu^1,2, Bo Jiang Yao^2,1 (1. Shenzhen China Star Optoelectronics Technology Co., Ltd. (China), 2. National Engineering Laboratory for AMOLED Process Technology (China), 3. School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University (China))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10

[AMDp1-14] Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs

*Chuanbao Luo¹, Qianyi Zhang¹, Ziran Li¹, Xuechao Ren¹, Xiaolong Meng¹, Dai Tian¹, Bisheng Mo¹, Xiaohu Wei¹, Xialiang Yuan¹, Shijian Qin¹ (1. Shenzhen China Star Optoelectronics Technology Co., Ltd (China))

Proceedings of the International Display Workshops Volume 26 (IDW '19) |2019年11月28日(木) 10:40 〜 13:10 |PDF ダウンロード