[B-5-9] Threshold Voltage Homogeneity and Electrical Properties of GaAs MESFETs on In-Doped Dislocation-Free Substrate

Y. Tanaka, T. Matsumura, F. Shimura, M. Kanamori, A. Higashisaka (1.2nd LSI Div., NEC Corp., 2.Microelectronics Res. Labs., NEC Corp.)

1985 Conference on Solid State Devices and Materials |PDF Download

[B-5-10] New Self-Aligned Gate Material; LaB6 for GaAs-IC

Tatsuo Yokotsuka, Yoko Uchida, Keisuke L. I. Kobayashi, Tadashi Narusawa, Hisao Nakashima (1.Optoelectronics Joint Research Laboratory)

1985 Conference on Solid State Devices and Materials |PDF Download

[C-1-9LN] Preparation of high photosensitive a-SiGe:H alloys from glow-discharge plasma

Akihisa Matsuda, Masato Koyama, Yuichiro Imanishi, Motoo Toyama, Nozomu Ikuchi, Kazunobu Tanaka (1.Electrotechnical Laboratory)

1985 Conference on Solid State Devices and Materials |PDF Download

[C-1-10LN] Amorphous-Si:H solar cells having a conversion efficiency of 10.5% by the separate chamber photo-CVD system

W. Y. Kim, H. Tasaki, H. Takei, M. Konagai, K. Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.K.K. Denkaihaku Kogyo)

1985 Conference on Solid State Devices and Materials |PDF Download

[B-2-7LN] Epitaxial Growth of AlxGa1-xN by MOVPE

Y. Koide, H. Itoh, N. Sawaki, I. Akasaki M. Hashimoto (1.Department of Electronics, School of Engineering, Nagoya University, 2.Toyota Central R&D Laboratories Inc.)

1985 Conference on Solid State Devices and Materials |PDF Download

[C-3-6LN] Lateral Solid Phase Epitaxy of Amorphous Si Films onto Non-planar SiO2 Patterns

Hiroshi Ishiwara, Akihiro Tamba, Seijiro Furukawa (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

1985 Conference on Solid State Devices and Materials |PDF Download

[C-3-7LN] Minimization of Residual Stress in SOI Films

Atsushi Ogura, Koji Egami, Masakazu Kimura (1.Fundamental Research Laboratories, NEC Corporation)

1985 Conference on Solid State Devices and Materials |PDF Download

[C-3-8LN] XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs

T. Sameshima, M. Sekiya, S. Usui (1.Sony Corporation Research Center)

1985 Conference on Solid State Devices and Materials |PDF Download

[C-3-9LN] XMOS Transistor for a 3D-IC

T. SEKIGAWA, Y. HAYASHI, K. ISHII, S. FUJITA (1.Electrotechnical Labolatory)

1985 Conference on Solid State Devices and Materials |PDF Download

[C-3-10LN] Synchrotron Radiation Excited Chemical Vapor Deposition of a-Si:H and SixNyHz Film

Hakaru KYURAGI, Tsuneo URISU (1.NTT Atsugi Electrical Communication Laboratories)

1985 Conference on Solid State Devices and Materials |PDF Download