[A-1-4] A New Device Structure Utilizing Atomic Layer Doping (ALD) Technology in Si Systems

Ken YAMAGUCHI、Kiyokazu NAKAGAWA、Yasuhiro SHIRAKI (1.Central Research Laboratory, Hitachi Ltd.、2.Research Center for Advanced Science and Technology University of Tokyo)

https://doi.org/10.7567/SSDM.1988.A-1-4