[A-5-2] A High Integrity and Low Resistance Ti-Polycide Gate Using a Nitrotgen Ion Implanted Buffer Layer

K. Kobushi、S. Okada、S. Kameyama、K. Tsuji (1.Basic Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1988.A-5-2