[A-9-2] A 5 Gb/s 4 Bit Shift Register with 0.5 μm WNx-gate GaAs MESFETs K. Ishida、T. Matsunaga、S. Miyano、A. Kameyama、N. Toyoda (1.ULSI Research Center, Toshiba Corporation) https://doi.org/10.7567/SSDM.1988.A-9-2