Characteristics of Bipolar Transistors with Various Depth n+ Buried Layers Formed by High Energy Ion Implantation

[A-9-5] Characteristics of Bipolar Transistors with Various Depth n+ Buried Layers Formed by High Energy Ion Implantation

A. Tamba, Y. Kobayashi, T. Suzuki, N. Natsuaki (1.Hitachi Research Laboratory, Hitachi Ltd., 2.Central Research Laboratory, Hitachi Ltd.)