[A-9-5] Characteristics of Bipolar Transistors with Various Depth n+ Buried Layers Formed by High Energy Ion Implantation

A. Tamba、Y. Kobayashi、T. Suzuki、N. Natsuaki (1.Hitachi Research Laboratory, Hitachi Ltd.、2.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1988.A-9-5