[B-1-5] New Phenomena in MNOS Retention Characteristics and Their Application to Memory Device Design for Megabit EEPROM's

Sin-ichi Minami、Yoshiaki Kamigaki、Ken Uchida、Koichi Nagasawa、Kazunori Furusawa、Takeshi Furuno、Takaaki Hagiwara、Masaaki Terasawa (1.Central Research Laboratory, Hitachi Ltd.、2.Musashi Works, Hitachi Ltd.、3.Hitachi VLSI Engineering Corp.)

https://doi.org/10.7567/SSDM.1988.B-1-5