[B-1-5] New Phenomena in MNOS Retention Characteristics and Their Application to Memory Device Design for Megabit EEPROM's

Sin-ichi Minami, Yoshiaki Kamigaki, Ken Uchida, Koichi Nagasawa, Kazunori Furusawa, Takeshi Furuno, Takaaki Hagiwara, Masaaki Terasawa (1.Central Research Laboratory, Hitachi Ltd., 2.Musashi Works, Hitachi Ltd., 3.Hitachi VLSI Engineering Corp.)

https://doi.org/10.7567/SSDM.1988.B-1-5