Low Temperature Pseudo HBT Utilizing Bandgap Narrowing Effect

Kazuo Yano; Kazuo Nakazato; Takahiro Onai; Masaaki Aoki; Katsuhiro Shimohigashi; Tohru Nakamura; Toshiaki Masuhara

doi:https://doi.org/10.7567/SSDM.1988.LA-6-6

1988 International Conference on Solid State Devices and Materials

Aug 24, 1988 - Aug 26, 1988
Keio Plaza Hotel, Tokyo, Japan

[LA-6-6] Low Temperature Pseudo HBT Utilizing Bandgap Narrowing Effect

Kazuo Yano, Kazuo Nakazato, Takahiro Onai, Masaaki Aoki, Katsuhiro Shimohigashi, Tohru Nakamura, Toshiaki Masuhara (1.Central Research Laboratory, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1988.LA-6-6

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