[S-IIIA-11] Integration of GaAs SISFET and GaAs Inversion-Base Bipolar Transistor

Kazuhiko Matsumoto, Yutaka Hayashi, Takeshi Kojima, Toshiyuki Nagata, Tomomi Yoshimoto (1.Electrotechnical Laboratory MITI)

https://doi.org/10.7567/SSDM.1988.S-IIIA-11