[S-IIIB-4] Creation of Micro-Resinoid Siloxane and Its Optimization for High Tg E-Beam Resist

Shigeyuki Sugito、Shinji Ishida、Yasuo Iida Katsutoshi Mine、Naohiro Muramoto (1.Microelectronics Research Laboratories, NEC Corporation、2.Dept. of Technical Service & Development, Toray Silicone Co., Ltd.)

https://doi.org/10.7567/SSDM.1988.S-IIIB-4