[S-IIIB-8] A New CMOS Structure Using a Transistor on a Lateral Epitaxial Silicon Layer

T. Ishijima、K. Terada、T. Kubota、M. Sakao、T. Hamaguchi、A. Ishitani (1.R&D Group, NEC Corporation)

https://doi.org/10.7567/SSDM.1988.S-IIIB-8