[S-I-5] Preparation of High Tc Oxide Superconducting Films by Laser Annealing

Yasuto YONEZAWA、Toshiharu MINAMIKAWA、Shigeru OTSUBO、Toshihiro MAEDA、Akihiro MOTO、Akiharu MORIMOTO、Tatsuo SHIMIZU (1.Industrial Research Institute of Ishikawa、2.Department of Electronics, Faculty of Technology, Kanazawa University)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-6] Advances in the Laser Deposition of High Tc Oxide Superconducting Films at Bellcore/Rutgers

X. D. Wu、T. Venkatesan、A. Inam、M. S. Hegde、E. W. Chase、B. Dutta、C. C. Chang、P. England、T. Cheeks、J. M. Tarascon、J. B. Wachtman、W. L. Mclean (1.Bellcore, Red Bank、2.Physics Department, Rutgers University、3.Center for Ceramics Research, Rutgers University)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-7] Low-Temperature Oxidation Process for High-Tc Ba-Y-Cu-O Thin Films

A. Yoshida、H. Tamura、S. Morohashi、S. Hasuo (1.Fujitsu Laboratories Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-8] Synchrotron Radiation PES Studies of High Tc Superconductor Surfaces and Interfaces for Contact and Junction Formation

Masaharu OSHIMA、Yasuko YAMADA、Tomoaki KAWAMURA、Satoshi MAEYAMA、Kouji HOHKAWA、Yasuo TAZOH、Tsuneaki MIYAHARA (1.NTT Applied Electronics Laboratories、2.NTT LSI Laboratories、3.Photon Factory, KEK)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-9] Submicron Superconducting Lines Fabricated from Sputtered Y-Ba-Cu-O Films

H. Tsuge、S. Matsui、N. Matsukura、Y. Kojima、Y. Wada (1.Microelectronics Res. Labs., Fundamental Res. Labs., NEC Corporation)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-I-10] Tunnel Junctions Using Single Crystal Films of YBa2Cu3O7-x Superconductor

J. Takada、H. Mazaki、T. Terashima、K. Iijima、K. Yamamoto、K. Hirata、Y. Bando (1.Research Institute for Production Development、2.The National Defence Academy、3.Institute for Chemical Research, Kyoto Univ.)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-1] Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge

Kunio TAKAYANAGI、Tomonobu NAKAYAMA、Yasumasa TANISHIRO (1.Department of Materials Science and Engineering, Tokyo Institute of Technology、2.Department of Physics, Tokyo Institute of Technology)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-2] Development of an Innovative 5μmφ Focused X-ray Beam Energy Dispersive Spectrometer for Analyzing Residual Stresses and Impurities in ULSIs

Naoki Yamamoto、Yukio Takano、Yoshinori Hosokawa、Kenji Yoshino (1.Central Research Laboratory, Hitachi, Ltd.、2.Research and Development Div., Horiba, Ltd.)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-3] Three-Dimensional Quantum Well Effects in Ultra-fine Silicon Particles

Shoji FURUKAWA、Tatsuro MIYASATO (1.Department of Computer Science and Electronics Kyushu Institute of Technology)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-II-4] In-situ XPS Characterization of Amorphous Semiconductor Hetero-junction Prepared by Photo and Plasma CVD Method

M. Kawasaki、Y. Matsuzaki、T. Ohtaki、Y. Yoshida、H. Koinuma (1.Department of Industrial Chemistry, University of Tokyo、2.Department of Applied Chemistry, University of Toyo、3.Research Laboratory of Engineering Materials, Tokyo Institute of Technology)

1988 International Conference on Solid State Devices and Materials |PDF ダウンロード