[A-1-1] Hot Carrier Effects in nMOSFET at 77 K and 300 K
Toyoji YAMAMOTO, Yasushi NISHIMURA, Takahiro IIZUKA Hiroshi MATSUMOTO, Masao FUKUMA
(1.Microelectronics Res. Labs., VLSI Development Div., NEC Corp., 2.NEC Scientific Information System Development Corp.)
https://doi.org/10.7567/SSDM.1991.A-1-1