Hot Carrier Effects in nMOSFET at 77 K and 300 K

Toyoji YAMAMOTO; Yasushi NISHIMURA; Takahiro IIZUKA Hiroshi MATSUMOTO; Masao FUKUMA

doi:https://doi.org/10.7567/SSDM.1991.A-1-1

1991 International Conference on Solid State Devices and Materials

1991年8月27日〜 1991年8月29日
Pacifico Yokohama, Yokohama, Japan

[A-1-1] Hot Carrier Effects in nMOSFET at 77 K and 300 K

Toyoji YAMAMOTO、Yasushi NISHIMURA、Takahiro IIZUKA Hiroshi MATSUMOTO、Masao FUKUMA (1.Microelectronics Res. Labs., VLSI Development Div., NEC Corp.、2.NEC Scientific Information System Development Corp.)

https://doi.org/10.7567/SSDM.1991.A-1-1

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