A 0.3μm BiCMOS Technology with Highly Self-Aligned Structures for Deep Submicron ULSIs

Shoji Shukuri; Yasuo Onose; Nagatoshi Ohki; Takashi Nishida; Mitsuru Hirao; Eiji Takeda

doi:https://doi.org/10.7567/SSDM.1991.A-5-4

[A-5-4] A 0.3μm BiCMOS Technology with Highly Self-Aligned Structures for Deep Submicron ULSIs

Shoji Shukuri、Yasuo Onose、Nagatoshi Ohki、Takashi Nishida、Mitsuru Hirao、Eiji Takeda (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi Research Laboratory, Hitachi Ltd.、3.Hitachi VLSI Engineering Corp.)

https://doi.org/10.7567/SSDM.1991.A-5-4

1991 International Conference on Solid State Devices and Materials

[A-5-4] A 0.3μm BiCMOS Technology with Highly Self-Aligned Structures for Deep Submicron ULSIs