A 0.3μm BiCMOS Technology with Highly Self-Aligned Structures for Deep Submicron ULSIs

Shoji Shukuri; Yasuo Onose; Nagatoshi Ohki; Takashi Nishida; Mitsuru Hirao; Eiji Takeda

doi:https://doi.org/10.7567/SSDM.1991.A-5-4

[A-5-4] A 0.3μm BiCMOS Technology with Highly Self-Aligned Structures for Deep Submicron ULSIs

Shoji Shukuri, Yasuo Onose, Nagatoshi Ohki, Takashi Nishida, Mitsuru Hirao, Eiji Takeda (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi Research Laboratory, Hitachi Ltd., 3.Hitachi VLSI Engineering Corp.)

https://doi.org/10.7567/SSDM.1991.A-5-4

1991 International Conference on Solid State Devices and Materials

[A-5-4] A 0.3μm BiCMOS Technology with Highly Self-Aligned Structures for Deep Submicron ULSIs