[A-8-4] An Advanced Fabrication Technology of Hemispherical Grained (HSG) Poly-Si for High Capacitance Storage Electrodes

H. Watanabe、T. Tatsumi、T. Niino、A. Sakai、S. Adachi、N. Aoto、K. Koyama、T. Kikkawa (1.Microelectronics Research Labs., NEC Corp.、2.Fundamental Research Labs., NEC Corp.、3.VLSI Development Division, NEC Corp.)

https://doi.org/10.7567/SSDM.1991.A-8-4