[LD-8-5] Symmetric P-n-P InAlAs/InGaAs Double Heterojunction Bipolar Transistor's Fabricated with Si-ion Implantation

Atsushi Nakagawa、Kaoru Inoue (1.Semiconductor Research Center, Matsushita Electric Industrial Co., LTD)

https://doi.org/10.7567/SSDM.1991.LD-8-5