Electrical Properties of PLZT Thin Films Prepared by a Sol-Gel Method

T. Okudaira; A. Hachisuka; N. Soyama; K. Ogi; H. Arima; T. Matsukawa; K. Horie

doi:https://doi.org/10.7567/SSDM.1991.PB1-1

[PB1-1] Electrical Properties of PLZT Thin Films Prepared by a Sol-Gel Method

T. Okudaira、A. Hachisuka、N. Soyama、K. Ogi、H. Arima、T. Matsukawa、K. Horie (1.Mitsubishi Electric Corp. LSI Lab.、2.Mitsubishi Electric Corp. Kitaitami Works、3.Mitsubishi Material Corp. Central Research Institute)

https://doi.org/10.7567/SSDM.1991.PB1-1

1991 International Conference on Solid State Devices and Materials

[PB1-1] Electrical Properties of PLZT Thin Films Prepared by a Sol-Gel Method