Mechanism of Lowering TiW/Si Contact Resistivity by Post Annealing Process

Masayuki SUZUKI; Ryo HARUTA; Yasuko YOSHIDA; Yoshihiko KOIKE; Tokio KATO

doi:https://doi.org/10.7567/SSDM.1991.PB1-4

1991 International Conference on Solid State Devices and Materials

Aug 27, 1991 - Aug 29, 1991
Pacifico Yokohama, Yokohama, Japan

[PB1-4] Mechanism of Lowering TiW/Si Contact Resistivity by Post Annealing Process

Masayuki SUZUKI, Ryo HARUTA, Yasuko YOSHIDA, Yoshihiko KOIKE, Tokio KATO (1.Semiconductor Design and Development Center, Hitachi, Ltd., 2.Hitachi Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1991.PB1-4

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