[PB1-4] Mechanism of Lowering TiW/Si Contact Resistivity by Post Annealing Process

Masayuki SUZUKI、Ryo HARUTA、Yasuko YOSHIDA、Yoshihiko KOIKE、Tokio KATO (1.Semiconductor Design and Development Center, Hitachi, Ltd.、2.Hitachi Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1991.PB1-4