C-MOS Self-Aligned Low Temperature Poly-Si TFTs Fabricated by Laser Annealing of Poly-Si Films

Tsutomu HASHIZUME; Satoshi INOUE; Takashi INAMI; Takashi NAKAZAWA; Ichio YUDASAKA; Hiroyuki OHSHIMA

doi:https://doi.org/10.7567/SSDM.1991.PC5-13

1991 International Conference on Solid State Devices and Materials

Aug 27, 1991 - Aug 29, 1991
Pacifico Yokohama, Yokohama, Japan

[PC5-13] C-MOS Self-Aligned Low Temperature Poly-Si TFTs Fabricated by Laser Annealing of Poly-Si Films

Tsutomu HASHIZUME, Satoshi INOUE, Takashi INAMI, Takashi NAKAZAWA, Ichio YUDASAKA, Hiroyuki OHSHIMA (1.SEIKO EPSON CORPORATION TFT Research Laboratory)

https://doi.org/10.7567/SSDM.1991.PC5-13

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