Batch-Process for High Performance Amorphous-Silicon Thin-Film Transistors Using Hot-Wall Chemical-Vapor-Deposition Method

Byung-Chul AHN; Kazuhiro SHIMIZU; Tsutomu SATOH; Hiroshi KANOH; Osamu SUGIURA; Masakiyo MATSUMURA

doi:https://doi.org/10.7567/SSDM.1991.PC5-2

[PC5-2] Batch-Process for High Performance Amorphous-Silicon Thin-Film Transistors Using Hot-Wall Chemical-Vapor-Deposition Method

Byung-Chul AHN、Kazuhiro SHIMIZU、Tsutomu SATOH、Hiroshi KANOH、Osamu SUGIURA、Masakiyo MATSUMURA (1.Department of Physical Electronics, Tokyo Institute of Technology、2.GoldStar Research Lab.)

https://doi.org/10.7567/SSDM.1991.PC5-2

1991 International Conference on Solid State Devices and Materials

[PC5-2] Batch-Process for High Performance Amorphous-Silicon Thin-Film Transistors Using Hot-Wall Chemical-Vapor-Deposition Method