[PC6-1] Analytical Temperature-Rise Model for SOI MOSFETs

Naoki YASUDA、Kenji TANIGUCHI、Chihiro HAMAGUCHI Yasuo YAMAGUCHI、Tadashi NISHIMURA (1.Department of Electronic Engineering, Osaka University、2.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1991.PC6-1