[PC6-1] Analytical Temperature-Rise Model for SOI MOSFETs

Naoki YASUDA, Kenji TANIGUCHI, Chihiro HAMAGUCHI Yasuo YAMAGUCHI, Tadashi NISHIMURA (1.Department of Electronic Engineering, Osaka University, 2.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1991.PC6-1