[PC6-8] In-situ Doping of Epitaxial Silicon by Low-Temperature LPCVD for the Fabrication of Delta-Doped MOSFETs

R. Kircher、J. Murota、M. Furuno、K. Aizawa、M. Kato、A. Horinouchi、S. Ono (1.Research Institute of Electr. Communication Tohoku University)

https://doi.org/10.7567/SSDM.1991.PC6-8