[PC6-8] In-situ Doping of Epitaxial Silicon by Low-Temperature LPCVD for the Fabrication of Delta-Doped MOSFETs

R. Kircher, J. Murota, M. Furuno, K. Aizawa, M. Kato, A. Horinouchi, S. Ono (1.Research Institute of Electr. Communication Tohoku University)

https://doi.org/10.7567/SSDM.1991.PC6-8