[B-1-3] CVD-EPI MOS Transistors with a 65 nm Vertical Channel

F. Hofmann、W. H. Krautschneider、L. Risch、H. Schaefer (1.Siemens AG, Corporate Research and Development, ZFE T MEI)

https://doi.org/10.7567/SSDM.1995.B-1-3