[B-2-1] A Novel High Density EEPROM Cells Using Poly-Gate Hole (POLE) Structure Suitable for Low Power Applications

Masataka Takebuchi, Jun-ichiro Noda, Daisuke Tohyama, Shu Ueno, Kanji Osari, Kuniyoshi Yoshikawa (1.Toshiba Corp., 2.Toshiba Microelectronics Corp.)

https://doi.org/10.7567/SSDM.1995.B-2-1